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Graphene aerogel (GA), a 3D carbon-based nanostructure built on 2D graphene sheets, is well known for being the lightest solid material ever synthesized. It also possesses many other exceptional properties, such as high specific surface area and large liquid absorption capacity, thanks to its ultra-high porosity. Computationally, the mechanical properties of GA have been studied by molecular dynamics (MD) simulations, which uncover nanoscale mechanisms beyond experimental observations. However, studies on how GA structures and properties evolve in response to simulation parameter changes, which provide valuable insights to experimentalists, have been lacking. In addition, the differences between the calculated properties via simulations and experimental measurements have rarely been discussed. To address the shortcomings mentioned above, in this study, we systematically study various mechanical properties and the structural integrity of GA as a function of a wide range of simulation parameters. Results show that during the in silico GA preparation, smaller and less spherical inclusions (mimicking the effect of water clusters in experiments) are conducive to strength and stiffness but may lead to brittleness. Additionally, it is revealed that a structurally valid GA in the MD simulation requires the number of bonds per atom to be at least 1.40, otherwise the GA building blocks are not fully interconnected. Finally, our calculation results are compared with experiments to showcase both the power and the limitations of the simulation technique. This work may shed light on the improvement of computational approaches for GA as well as other novel nanomaterials. 

The study aimed to investigate the underlying physics limiting the temperature stability and performance of non-surface passivated Al0.34Ga0.66N/GaN Hall effect sensors, including contacts, under atmospheric conditions. The results obtained from analyzing the microstructural evolution in the Al0.34Ga0.66N/GaN Hall sensor heterostructure were found to correlate with the electrical performance of the Hall effect sensor. High-resolution x-ray photoelectron spectroscopy studies revealed the signature of surface oxidation in the GaN cap layer, as well as a slight out-diffusion of “Al” from the AlGaN barrier layer. To prevent the formation of a bumpy surface morphology at the Ohmic contact, we investigated the impact of “Pt” top Ohmic contacts. The application of a top “Pt” contact stack resulted in a smooth Ohmic contact surface and provided evidence that the bumpy surface morphology in Au-based Ohmic contacts is due to the formation of an Al-Au viscous alloy during rapid thermal annealing. In the early stages of thermal aging, the small drop in contact resistivity stabilized with subsequent thermal aging past the initial 550 h at 200 °C. The outcome is that the Al0.34Ga0.66N/GaN Hall effect sensors, even without surface passivation, exhibited a stable response to applied magnetic fields with no sign of significant degradation after 2800 h of thermal aging at 200 °C under atmospheric conditions. This observed stability in the Hall sensor without surface passivation can be attributed to a self-imposed surface oxidation of the cap layer during the early stages of aging, which serves as a protective layer for the device during subsequent extended periods of thermal aging at 200 °C. 

Monolithic strong magnetic induction at the mtesla to tesla level provides essential functionalities to physical, chemical, and medical systems. Current design options are constrained by existing capabilities in three-dimensional (3D) structure construction, current handling, and magnetic material integration. We report here geometric transformation of large-area and relatively thick (~100 to 250 nm) 2D nanomembranes into multiturn 3D air-core microtubes by a vapor-phase self-rolled-up membrane (S-RuM) nanotechnology, combined with postrolling integration of ferrofluid magnetic materials by capillary force. Hundreds of S-RuM power inductors on sapphire are designed and tested, with maximum operating frequency exceeding 500 MHz. An inductance of 1.24 μH at 10 kHz has been achieved for a single microtube inductor, with corresponding areal and volumetric inductance densities of 3 μH/mm 2 and 23 μH/mm 3 , respectively. The simulated intensity of the magnetic induction reaches tens of mtesla in fabricated devices at 10 MHz.